s mhop microelectronics c orp. a stu/d434s symbol v ds v gs i dm a i d units parameter 40 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) max 40v 50a 11.5 @ vgs=4.5v 9.2 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. to-252 and to-251 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a ver 1.1 www.samhop.com.tw jun,26,2009 1 details are subject to change without notice. t c =25 c g g s s d d g g s s s t u s e ri e s to - 2 5 2 aa ( d - p a k ) s t d s e ri e s to - 2 5 1 ( i - p a k ) w p d c -55 to 150 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja 3 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy c t c =70 c w a a 91 50 40 147 42 27 green product
symbol min typ max units bv dss 40 v 1 i gss 100 na v gs(th) v 7.6 g fs s c iss 1160 pf c oss 211 pf c rss 135 pf q g 17 nc 24 59 11 t d(on) 20 ns t r ns t d(off) ns t f ns v ds =20v,v gs =0v switching characteristics v dd =20v i d =1a v gs =10v r gen =3.3 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =25a v ds =10v , i d =25a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =32v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =20a 9.2 8.8 11.5 m ohm b f=1.0mhz b stu/d434s ver 1.1 www.samhop.com.tw jun,26,2009 2 v sd nc q gs nc q gd 2.1 5 gate-drain charge gate-source charge diode forward voltage v ds =20v,i d =25a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =10a 0.84 1.3 v i s maximum continuous drain-source diode forward current 10 a notes nc 10 v ds =20v,i d =25a,v gs =10v v ds =20v,i d =25a,v gs =4.5v a a.pulse test:pulse width < 300us, duty cycle < 2%. b.guaranteed by design, not subject to production testing. c.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure13) d.pulse test:pulse width < 1us,duty cycle < 1%. _ _ 1.3 1.7 3 18 a _ _ bv dss 45 v drain-source breakdown voltage v gs =0v,i d =10ma d
stu/d434s ver 1.1 www.samhop.com.tw jun,26,2009 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3 100 v gs =10v v gs =3v v gs =2.5v v gs =3.5v v gs =4v 60 48 36 24 0 0 0.7 1.4 2.1 2.8 3.5 4.2 12 25 c -55 c tj=125 c 16 12 8 4 1 20 40 60 80 100 1 v gs =10v v gs =4.5v 20 2.0 1.8 1.6 1.4 1.2 1.0 0 0 25 50 125 100 75 v gs =10v i d =25a v gs =4.5v i d =20a 150 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =250ua -50 -25 0 25 50 75 100 125 150 1.40 1.30 1.20 1.10 1.00 0.90 0.80 i d =250ua
stu/d434s ver 1.1 www.samhop.com.tw jun,26,2009 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 30 25 20 15 10 5 0 24 68 10 0 i d =25a 75 c 125 c 25 c 10 1 00.24 60 20 1.20 0.48 0.72 0.96 1800 1500 1200 900 600 300 0 ciss coss crss 01015202530 10 8 6 4 2 0 036 9 12 18 21 24 27 v ds =20v i d =25a 500 100 10 1 0.1 1 10 40 100 v gs =10v single pulse t a =25 c r d s (on) l imit 125 c 25 c 5 1 10 100 100 10 1 1000 3 vds=20v,id=1a vgs=10v td(off) td(on) tr tf 10ms dc 1m s 100us
t p v (br )dss i as r g i as 0.01 t p d.u.t l v ds + - v dd dr ive r a 15v 20v figure 13b. stu/d434s ver 1.1 www.samhop.com.tw jun,26,2009 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datasheet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse unclamped inductive waveforms figure 13a. unclamped inductive test circuit
stu/d434s ver 1.1 www.samhop.com.tw jun,26,2009 6 package outline dimensions to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 13.700 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 15.300 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.539 0.602 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
stu/d434s ver 1.1 www.samhop.com.tw jun,26,2009 7 to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067
stu/d434s ver 1.1 www.samhop.com.tw jun,26,2009 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 -0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 "a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h
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